| 摘要 |
PROBLEM TO BE SOLVED: To achieve a perpendicular magnetization magnetoresistive random access memory which improves thermal stability without increasing a rewriting current to improve trade-off relation.SOLUTION: A perpendicular magnetization magnetoresistive random access memory comprises a plurality of perpendicular magnetization magnetoresistive random access memory cells 10. Each memory cell includes: a tunnel insulation film MgO 51; a magnetization free layer 53 and a magnetization fixed layer 52 which are formed opposite to each other across the tunnel insulation film to form a two-layer ferromagnetic metal electrode; and additional layers 56, 57 formed on the magnetization free layer on an interface opposite to the tunnel insulation film. The additional layer has at least one pair including an interface cap layer 56 and an auxiliary layer 57 of the ferromagnetic electrode. The perpendicular magnetization magnetoresistive random access memory stores data by utilizing interface perpendicular magnetization of the tunnel insulation film and the two-layer ferromagnetic metal electrode. |
