| 摘要 |
PROBLEM TO BE SOLVED: To eliminate a problem caused by a conventional technology.SOLUTION: In a manufacturing method of a diode 1 of forming on a semiconductor crystal plate 10, PN or NP junction parts smoothly extending across a surface 3 of the semiconductor crystal plate 10, and in the following process, cutting the semiconductor crystal plate 10 into individual diode chips 1 in which the cutting is performed such that cutting edges 6 extending over the PN or NP junction parts are formed perpendicular to the surface 3 of the semiconductor crystal plate 10, a fault part 11 is introduced into the semiconductor crystal plate 10 for the cutting, and local heating 12 and local cooling 13 of the semiconductor crystal plate 10 are performed beginning at the fault part 11 to extend a crack from the fault part 11 based on mechanical stress produced by the local heating 12 and the local cooling 13. |
