发明名称 |
AMORPHOUS PHASE YTTRIUM-DOPED INDIUM ZINC OXIDE THIN FILM TRANSISTORS AND METHOD FOR MAKING SAME |
摘要 |
Sol-gel-processed thin-film transistors (TFTs) with amorphours Y-In-Zn-O (YIZO) as an active layer are fabricated with various mole ratios of Y, which indicates that Y3+ could play the role of carrier suppressor in InZnO (IZO) systems and reduce off current of YIZO-TFT and its channel mobility, threshold voltage, subthreshold swing voltage, and on/off ratio. |
申请公布号 |
US2014014943(A1) |
申请公布日期 |
2014.01.16 |
申请号 |
US201213549844 |
申请日期 |
2012.07.16 |
申请人 |
TING CHU-CHI;CHANG HSIEH-PING;NATIONAL CHUNG CHENG UNIVERSITY |
发明人 |
TING CHU-CHI;CHANG HSIEH-PING |
分类号 |
H01L29/24;H01L21/336;H01L21/36;H01L29/786 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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