| 发明名称 |
THYRISTOR RANDOM ACCESS MEMORY DEVICE AND METHOD |
| 摘要 |
Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided reduce a need for manufacturing methods such as deep dopant implants. |
| 申请公布号 |
US2014015001(A1) |
申请公布日期 |
2014.01.16 |
| 申请号 |
US201314028242 |
申请日期 |
2013.09.16 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
TANG SANH D.;ZAHURAK JOHN K.;VIOLETTE MICHAEL P. |
| 分类号 |
H01L29/74 |
主分类号 |
H01L29/74 |
| 代理机构 |
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代理人 |
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