发明名称 METHOD OF PATTERNING A LOW-K DIELECTRIC FILM
摘要 <p>Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer. The low-k dielectric layer is disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a plasma process. The method also involves, in the same operation, removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.</p>
申请公布号 WO2014011382(A1) 申请公布日期 2014.01.16
申请号 WO2013US47164 申请日期 2013.06.21
申请人 APPLIED MATERIALS, INC. 发明人 NEMANI, SRINIVAS D.;PENDER, JEREMIAH T.;ZHOU, QINGJUN;LUBOMIRSKY, DMITRY;BELOSTOTSKIY, SERGEY G.
分类号 H01L21/311 主分类号 H01L21/311
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