SEMICONDUCTOR RECTIFIER AND THE MANUFACTURING METHOD

摘要

Rectifying semiconductor comprises (i) forming mesa shape in at least one layer of rectifying semiconductor junction with top of mesa at top surface of layer and side wall of mesa sloping outwardly from top towards junction, (ii) forming high concn. semiconductor region in top surface of layer. Region has the same conductivity type as layer and covers area extending entirely across top of mesa to intersect mesa side wall and (iii) driving high concn. region from top of mesa deeper into layer but not beyond mesa base. Outward slope of mesa geometry should cause high concn. region to take concave shape as it penetrates into mesa with distance bewteen high concn. region and junction being greater at intersection of region with sloping mesa walls than in central portion of mesa.