| 摘要 |
A thin-film semiconductor device for a display apparatus according to the present disclosure includes: a gate electrode above a substrate; a gate insulating film above the gate electrode; a semiconductor layer above the gate electrode; a first electrode above the semiconductor layer; a second electrode in a same layer as the first electrode; an interlayer insulating film covering the first electrode and the second electrode; a gate line above the interlayer insulating film; a first power supply line electrically connected to the second electrode and in a same layer as the second electrode; and a second power supply line in a same layer as the gate line. Furthermore, the gate electrode and the gate line are electrically connected via a first conductive portion, and the first power supply line and the second power supply line are electrically connected via a second conductive portion. |
