SOI integrated circuit comprising a lateral diode for protection against electrostatic discharges

摘要

The circuit has a semiconducting zone (22) arranged for electrical connection to an electrode of a metal oxide semiconductor fully depleted silicon on insulator transistor. A shallow trench isolation-type isolation trench (16) extends through a Ultra-Thin Buried Oxide Layer (UTBOX) buried insulating layer and into a semiconducting ground plane (12) until depth less than an interface between the plane and a semiconducting well (14), and another semiconducting zone (28) under the trench forming a junction between the first semiconducting zone and a third semiconducting zone (24).