| 摘要 |
PROBLEM TO BE SOLVED: To provide a small semiconductor device which can operate even if an electrode is disconnected and operate with large current. SOLUTION: A cell 160 includes: a source electrode 182 formed to form an opening portion for defining a hexagonal element forming region; a drain electrode 180 formed like a strip in the element forming region with a predetermined distance from the source electrode 182; and a gate electrode 184 formed on the element forming region with a predetermined distance from both the source electrode 182 and the drain electrode 180. A gate leading electrode 186 is formed so as to be superimposed on the source electrode 182 form the center portion of each of sides of the gate electrode 184, and an insulation film is formed between the gate leading electrode 186 and the source electrode 182. COPYRIGHT: (C)2010,JPO&INPIT |
