| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device which suppresses cracking of a nitride semiconductor, is free of peeling of a protective film on an end face, and has excellent characteristics. SOLUTION: A nitride semiconductor laser device comprises; nitride semiconductor layers in which a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order; and a protective film formed on a resonator end face of the nitride semiconductor layers, the protective film being a film in which an axial alignment of crystals varies in the direction of lamination of the nitride semiconductor layers at least on the resonator end face on a light projection face side. COPYRIGHT: (C)2009,JPO&INPIT |
