| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for reducing on-resistance at collapsing and reducing a gate leakage current. SOLUTION: The semiconductor device has: a gate electrode 7 in Schottky-contact with nitride-based compound semiconductor layers (3, 4) on the nitride-based compound semiconductor layers (3, 4); a first insulation film 18 formed on the gate electrode 7; a source electrode 5 in low-resistance contact with the nitride-based compound semiconductor layers (3, 4) on the nitride-based compound semiconductor layers 3, 4 separated from the gate electrode 7; a source FP electrode 9 that is formed via the gate electrode 7 and the first insulation film 18, connected to the source electrode 5 electrically, and extended while straddling over the gate electrode 7 when viewed in a plan view, and a second insulation film 10 formed on the source FP electrode 9. In the semiconductor device, the source FP electrode 9 is formed to be thicker than the source electrode 5. COPYRIGHT: (C)2009,JPO&INPIT |
