发明名称 |
METHOD FOR PRODUCING THE PENTANARY COMPOUND SEMICONDUCTOR CZTSSE, AND THIN-FILM SOLAR CELL |
摘要 |
A method for producing a compound semiconductor composed of pentanary kesterite/stannite of the type Cu2ZnSn(S,Se)4 is described. The method has the following steps: producing at least one precursor layer stack consisting of a first precursor layer and a second precursor layer; thermally treating the at least one precursor layer stack in a process chamber; and feeding at least one process gas into the process chamber during the thermal treatment of the at least one precursor layer stack. Furthermore, a thin-film solar cell with an absorber consisting of the pentanary compound semiconductor Cu2ZnSn(S,Se)4 on a body is described. |
申请公布号 |
EP2684212(A1) |
申请公布日期 |
2014.01.15 |
申请号 |
EP20120709818 |
申请日期 |
2012.02.22 |
申请人 |
SAINT-GOBAIN GLASS FRANCE |
发明人 |
JOST, STEPHAN;PALM, JOERG |
分类号 |
H01L21/36;H01L31/032;H01L31/072 |
主分类号 |
H01L21/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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