发明名称 |
TRENCH DMOS DEVICE WITH IMPROVED TERMINATION STRUCTURE FOR HIGH VOLTAGE APPLICATIONS |
摘要 |
A termination structure is provided for a power transistor. The termination structure includes a semiconductor substrate having an active region and a termination region. The substrate has a first type of conductivity. A termination trench is located in the termination region and extends from a boundary of the active region toward an edge of the semiconductor substrate. A doped region having a second type of conductivity is disposed in the substrate below the termination trench. A MOS gate is formed on a sidewall adjacent the boundary. The doped region extends from below a portion of the MOS gate spaced apart from the boundary toward the edge of the semiconductor substrate. A termination structure oxide layer is formed on the termination trench covering a portion of the MOS gate and extends toward the edge of the substrate. A first conductive layer is formed on a backside surface of the semiconductor substrate and a second conductive layer is formed atop the active region, an exposed portion of the MOS gate, and extends to cover a portion of the termination structure oxide layer. |
申请公布号 |
EP2548230(A4) |
申请公布日期 |
2014.01.15 |
申请号 |
EP20110756731 |
申请日期 |
2011.03.08 |
申请人 |
VISHAY GENERAL SEMICONDUCTOR LLC |
发明人 |
HSU, CHIH-WEI;UDREA, FLORIN;LIN, YIH-YIN |
分类号 |
H01L29/78;H01L29/06;H01L29/40;H01L29/739;H01L29/872 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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