发明名称 CHEMICAL VAPOR DEPOSITION-PRODUCED SILICONC CARBIDE HAVING IMPROVED PROPERTIES
摘要 beta -silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400-1500 DEG C range, pressure 6.7kPa or less, H2/methyltrichlorosilane molar ratios of 4:-30: 1 and a deposition rate of 1 mu m or less. <IMAGE>
申请公布号 IL106864(D0) 申请公布日期 1993.12.28
申请号 IL19930106864 申请日期 1993.09.01
申请人 CVD, INC. 发明人
分类号 C01B31/36;B28B1/30;C04B35/565;C04B35/571;C23C16/01;C23C16/32;C23C16/44;(IPC1-7):C23C/ 主分类号 C01B31/36
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