发明名称 |
Process for fabricating high density contactless EPROMs. |
摘要 |
<p>An improved fabrication process employing relatively non-critical masks permits the fabrication of high density electrically programmable and erasable EEPROM or FLASH-EPROM devices. In practice the novel process permits the fabrication of a contactless type, cross-point cell definition, matrix providing for a more comfortable "pitch" of bitline metal-definition while realizing a cell layout with a gate structure which extends laterally over adjacent portions of field oxide, thus establishing an appropriate capacitive coupling between control and floating gates. Two alternative embodiments are described. <IMAGE></p> |
申请公布号 |
EP0573728(A1) |
申请公布日期 |
1993.12.15 |
申请号 |
EP19920830282 |
申请日期 |
1992.06.01 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L. |
发明人 |
FONTANA, GABRIELLA;BELLEZZA, ORIO;CRISENZA, GIUSEPPE PAOLO |
分类号 |
H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/82 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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