| 摘要 |
Made available are a method of growing aluminum nitride crystal, a method of manufacturing aluminum nitride crystal, and aluminum nitride crystal, wherein by preventing sublimation of the starting substrate in growing aluminum nitride crystal, aluminum nitride crystal of excellent crystallinity is grown improving the growth rate. The method of growing aluminum nitride crystal (20) is provided with the following steps. Initially, a laminar baseplate (10) is prepared, furnished with a starting substrate (11) having a major surface (11a) and a back side (11b), a first layer (12) formed on the back side (11b), and a second layer (13) formed on the first layer (12). Aluminum nitride crystal (20) is then grown onto the major surface (11a) of the starting substrate (11) by vapor deposition. The first layer (12) is made of a substance that at the temperatures at which the aluminum nitride crystal (20) is grown is less liable to sublimate than the starting substrate (11). The second layer (13) is made of a substance whose thermal conductivity is higher than that of the first layer (12). |
