| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer having a good forward voltage by reducing defective forward voltage (Vf) generated by Si which is mixed when forming a p-type layer as compared with prior art. <P>SOLUTION: The method of manufacturing an epitaxial wafer includes at least a step for growing a p-type layer epitaxially on a substrate consisting of a compound semiconductor by hydride vapor phase epitaxial method. When temperature of the substrate is raised before starting epitaxial growth of the p-type layer, p-type dopant gas is fed more than that fed during epitaxial growth of the p-type layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
