| 摘要 |
<p>The present invention relates to a semiconductor device including a vertical channel transistor and a manufacturing method thereof capable of reducing parasitical capacitance between facing embedded bit lines and preventing a body to fall down due a high aspect etching process. The manufacturing method includes a step of forming a silicon body line separated from a trench by etching a silicon substrate, a step of forming an insulating pattern having a surface lower than the top surface of the body line in the trench, a step of forming an embedded silicon film performing gap-fill to the top of the insulating film pattern by performing a heat process for silicon transfer, a step of forming a silicon film on the embedded silicon film and the silicon body line, and a step of forming a silicon filler including a channel area of the vertical channel transistor by etching the silicon film. The invention can improve the reliability of semiconductor devices by forming a semiconductor filter in which a vertical channel is formed with high quality single crystal silicon. In addition, the invention can prevent the leaning of the filler and the body by individually performing an etch process for forming the semiconductor filler in which the embedded semiconductor body including a bit line and the channel.</p> |
