发明名称 |
METHODS OF FABRICATING SEMICONDUCTOR DEVICES |
摘要 |
A semiconductor element forming method includes a step of preparing a first and second substrates, a step of forming metal wires on a first surface of the first substrate, a step of forming a filling insulating layer covering top surfaces of the metal wires and filling gaps between sides of the wires, a step of a buffer insualiating layer softer than the filling insulating layer on the filling insulating layer, a step of forming a capping insulating layer harder than the buffer insulating layer on the buffer insulating layer, and a step of bonding a surface of the second substrate and a surface of the capping insulating layer. |
申请公布号 |
KR20140005422(A) |
申请公布日期 |
2014.01.15 |
申请号 |
KR20120072472 |
申请日期 |
2012.07.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, DAE KEUN;KANG, DONG JO;KIM, HYOUNG JUN;CHUNG, JIN SUNG |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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