发明名称 METHODS OF FABRICATING SEMICONDUCTOR DEVICES
摘要 A semiconductor element forming method includes a step of preparing a first and second substrates, a step of forming metal wires on a first surface of the first substrate, a step of forming a filling insulating layer covering top surfaces of the metal wires and filling gaps between sides of the wires, a step of a buffer insualiating layer softer than the filling insulating layer on the filling insulating layer, a step of forming a capping insulating layer harder than the buffer insulating layer on the buffer insulating layer, and a step of bonding a surface of the second substrate and a surface of the capping insulating layer.
申请公布号 KR20140005422(A) 申请公布日期 2014.01.15
申请号 KR20120072472 申请日期 2012.07.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, DAE KEUN;KANG, DONG JO;KIM, HYOUNG JUN;CHUNG, JIN SUNG
分类号 H01L27/146 主分类号 H01L27/146
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