发明名称 Memory devices and methods for high random transaction rate
摘要 A memory device can include a random access memory array configured to store data values; a plurality of bi-directional ports, configured to transfer data values into and out of the memory device on rising and falling transitions of at least one access clock signal; and at least one address bus configured to receive at least a portion of address values to random access locations on rising and falling transitions a timing clock signal having the same frequency as the access clock signal.
申请公布号 US8630111(B2) 申请公布日期 2014.01.14
申请号 US201313859669 申请日期 2013.04.09
申请人 CYPRESS SEMICONDUCTOR CORPORATION 发明人 MAHESHWARI DINESH;BARBARA BRUCE;MARINO JOHN
分类号 G11C11/00 主分类号 G11C11/00
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