发明名称 |
Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer |
摘要 |
Multiple transistor types are formed in a common epitaxial layer by differential out-diffusion from a doped underlayer. Differential out-diffusion affects the thickness of a FET channel, the doping concentration in the FET channel, and distance between the gate dielectric layer and the doped underlayer. Differential out-diffusion may be achieved by differentially applying a dopant migration suppressor such as carbon; differentially doping the underlayer with two or more dopants having the same conductivity type but different diffusivities; and/or differentially applying thermal energy. |
申请公布号 |
US8629016(B1) |
申请公布日期 |
2014.01.14 |
申请号 |
US201213459971 |
申请日期 |
2012.04.30 |
申请人 |
HOFFMANN THOMAS;RANADE PUSHKAR;SHIFREN LUCIAN;THOMPSON SCOTT E.;SUVOLTA, INC. |
发明人 |
HOFFMANN THOMAS;RANADE PUSHKAR;SHIFREN LUCIAN;THOMPSON SCOTT E. |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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