发明名称 |
Uncooled infrared imaging element and manufacturing method thereof |
摘要 |
An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor. |
申请公布号 |
US8629396(B2) |
申请公布日期 |
2014.01.14 |
申请号 |
US201113235388 |
申请日期 |
2011.09.18 |
申请人 |
OGATA MASAKO;FUJIWARA IKUO;HONDA HIROTO;SUZUKI KAZUHIRO;KWON HONAM;UENO RISAKO;YAGI HITOSHI;ATSUTA MASAKI;ISHII KOICHI;SASAKI KEITA;FUNAKI HIDEYUKI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
OGATA MASAKO;FUJIWARA IKUO;HONDA HIROTO;SUZUKI KAZUHIRO;KWON HONAM;UENO RISAKO;YAGI HITOSHI;ATSUTA MASAKI;ISHII KOICHI;SASAKI KEITA;FUNAKI HIDEYUKI |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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