发明名称 |
Solid-state imaging element and driving method of the solid-state imaging element |
摘要 |
Disclosed herein is a solid-state imaging element including: (A) a light reception/charge storage region formed in a semiconductor layer, the light reception/charge storage region including M light reception/charge storage layers stacked one on top of the other, where M>=2; (B) a charge output region formed in the semiconductor layer; (C) a conduction/non-conduction control region which includes a portion of the semiconductor layer located between the light reception/charge storage region and the charge output region; and (D) a conduction/non-conduction control electrode adapted to control the conduction or non-conduction state of the conduction/non-conduction control region, wherein mth potential control electrodes are provided between the mth and (m+1)th light reception/charge storage layers, where 1@m@(M-1), to control the potentials of the light reception/charge storage layers. |
申请公布号 |
US8629385(B2) |
申请公布日期 |
2014.01.14 |
申请号 |
US20100705161 |
申请日期 |
2010.02.12 |
申请人 |
TAKESHITA KANEYOSHI;KUBODERA TAKASHI;NAKAMURA AKIHIRO;SONY CORPORATION |
发明人 |
TAKESHITA KANEYOSHI;KUBODERA TAKASHI;NAKAMURA AKIHIRO |
分类号 |
H01L27/00;H01L27/146;H01L31/10 |
主分类号 |
H01L27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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