| 摘要 |
A semiconductor device includes a semiconductor substrate made of silicon carbide and having a surface, a normal vector for the surface having an off angle with respect to a <0001> direction or a <000-1> direction, a semiconductor layer of a first conductivity type formed on the semiconductor substrate, a first semiconductor region of a second conductivity type formed in a surface region of the semiconductor layer, a source region of a first conductivity type formed in a surface region of the first semiconductor region, a second semiconductor region of a second conductivity type formed in the surface region of the semiconductor layer, contacting the first semiconductor region, and having a bottom surface lower than a bottom surface of the first semiconductor region, wherein at least one end of the bottom surface of the second semiconductor region is perpendicular to an off angle direction. |
