发明名称 |
Tunneling magnetoresistance sensor |
摘要 |
A tunneling magnetoresistance sensor including a substrate, an insulating layer, a tunneling magnetoresistance component and an electrode array is provided. The insulating layer is disposed on the substrate. The tunneling magnetoresistance component is embedded in the insulating layer. The electrode array is formed in a single metal layer and disposed in the insulating layer either below or above the TMR component. The electrode array includes a number of separate electrodes. The electrodes are electrically connected to the tunneling magnetoresistance component to form a current-in-plane tunneling conduction mode. The tunneling magnetoresistance sensor in this configuration can be manufactured with a reduced cost and maintain the high performance at the same time. |
申请公布号 |
US8629519(B2) |
申请公布日期 |
2014.01.14 |
申请号 |
US201113333951 |
申请日期 |
2011.12.21 |
申请人 |
LEE CHIEN-MIN;CHEN KUANG-CHING;LIOU FU-TAI;VOLTAFIELD TECHNOLOGY CORPORATION |
发明人 |
LEE CHIEN-MIN;CHEN KUANG-CHING;LIOU FU-TAI |
分类号 |
H01L29/82 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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