发明名称 |
Epitaxial silicon CMOS-MEMS microphones and method for manufacturing |
摘要 |
A method of manufacturing a microphone using epitaxially grown silicon. A monolithic wafer structure is provided. A wafer surface of the structure includes poly-crystalline silicon in a first horizontal region and mono-crystalline silicon in a second horizontal region surrounding a perimeter of the first horizontal region. A hybrid silicon layer is epitaxially deposited on the wafer surface. Portions of the hybrid silicon layer that contact the poly-crystalline silicon use the poly-crystalline silicon as a seed material and portions that contact the mono-crystalline silicon use the mono-crystalline silicon as a seed material. As such, the hybrid silicon layer includes both mono-crystalline silicon and poly-crystalline silicon in the same layer of the same wafer structure. A CMOS/membrane layer is then deposited on top of the hybrid silicon layer. |
申请公布号 |
US8629011(B2) |
申请公布日期 |
2014.01.14 |
申请号 |
US201113161194 |
申请日期 |
2011.06.15 |
申请人 |
DIAMOND BRETT M.;LAERMER FRANZ;DOLLER ANDREW J.;DALEY MICHAEL J.;STETSON PHILLIP SEAN;MUZA JOHN M.;ROBERT BOSCH GMBH |
发明人 |
DIAMOND BRETT M.;LAERMER FRANZ;DOLLER ANDREW J.;DALEY MICHAEL J.;STETSON PHILLIP SEAN;MUZA JOHN M. |
分类号 |
H01L21/339 |
主分类号 |
H01L21/339 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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