发明名称 |
Semiconductor structure having low thermal stress |
摘要 |
A semiconductor structure includes a Si substrate, a supporting layer and a blocking layer formed on the substrate and an epitaxy layer formed on the supporting layer. The supporting layer defines a plurality of grooves therein to receive the blocking layer. The epitaxy layer is grown from the supporting layer. A plurality of slots is defined in the epitaxy layer and over the blocking layer. The epitaxy layer includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. |
申请公布号 |
US8629534(B2) |
申请公布日期 |
2014.01.14 |
申请号 |
US201313926419 |
申请日期 |
2013.06.25 |
申请人 |
ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.;ADVANCED OPTOELECTRONICS TECHNOLOGY, INC. |
发明人 |
HUANG SHIH-CHENG;TU PO-MIN;YANG SHUN-KUEI;HUANG CHIA-HUNG |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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