发明名称 |
Non-volatile memory cell structure and a method of fabricating the same |
摘要 |
A non-volatile memory cell structure and a method of fabricating the same. The method comprising the steps of: fabricating a portion of a floating gate from one or more first metal local interconnection layer (LIL) slit contacts deposited on a patterned dielectric layer; and fabricating a portion of a control gate from one or more second metal LIL slit contacts deposited on the patterned dielectric layer; wherein the first and second metal LIL slit contacts form a capacitive structure between the floating gate and the control gate. |
申请公布号 |
US8629032(B2) |
申请公布日期 |
2014.01.14 |
申请号 |
US201113008407 |
申请日期 |
2011.01.18 |
申请人 |
HUANG SHENG HE;SYSTEMS ON SILICON MANUFACTURING CO. PTE. LTD. |
发明人 |
HUANG SHENG HE |
分类号 |
H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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