发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
Provided are a semiconductor device and a method of fabricating the same. The method includes: forming a trench in a semiconductor substrate of a first conductive type; forming a trench dopant containing layer including a dopant of a second conductive type on a sidewall and a bottom surface of the trench; forming a doping region by diffusing the dopant in the trench dopant containing layer into the semiconductor substrate; and removing the trench dopant containing layer. |
申请公布号 |
US8629020(B2) |
申请公布日期 |
2014.01.14 |
申请号 |
US201113228479 |
申请日期 |
2011.09.09 |
申请人 |
KIM SANG GI;KOO JIN-GUN;YOO SEONG WOOK;PARK JONG-MOON;LEE JIN HO;NA KYOUNG IL;YANG YIL SUK;KIM JONGDAE;ELECTRONICS & TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KIM SANG GI;KOO JIN-GUN;YOO SEONG WOOK;PARK JONG-MOON;LEE JIN HO;NA KYOUNG IL;YANG YIL SUK;KIM JONGDAE |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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