发明名称 CAPACITIVE DEVICES USING NEGATIVE CAPACITANCE OF FERROELECTRIC MATERIALS
摘要 A capacitance device according to an embodiment includes a substrate; a first dielectric layer placed on the substrate and having positive capacitance; a second dielectric layer placed on the top of the first dielectric layer or between the substrate; and the first dielectric layer having negative capacitance in order to make the whole capacitor of the capacitor device larger than the capacitance of each dielectric layer. The negative capacitance indicates a ferroelectric layer and a composite mixed with a ferroelectric material in order to stabilize the negative capacitance of the ferroelectric layer in an operation temperature area.
申请公布号 KR20140004855(A) 申请公布日期 2014.01.14
申请号 KR20120072047 申请日期 2012.07.03
申请人 SNU R&DB FOUNDATION 发明人 HWANG, CHEOL SEONG;PARK, MIN HYUK;KIM, YU JIN
分类号 H01L27/108;H01L21/8242 主分类号 H01L27/108
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