发明名称 |
CAPACITIVE DEVICES USING NEGATIVE CAPACITANCE OF FERROELECTRIC MATERIALS |
摘要 |
A capacitance device according to an embodiment includes a substrate; a first dielectric layer placed on the substrate and having positive capacitance; a second dielectric layer placed on the top of the first dielectric layer or between the substrate; and the first dielectric layer having negative capacitance in order to make the whole capacitor of the capacitor device larger than the capacitance of each dielectric layer. The negative capacitance indicates a ferroelectric layer and a composite mixed with a ferroelectric material in order to stabilize the negative capacitance of the ferroelectric layer in an operation temperature area. |
申请公布号 |
KR20140004855(A) |
申请公布日期 |
2014.01.14 |
申请号 |
KR20120072047 |
申请日期 |
2012.07.03 |
申请人 |
SNU R&DB FOUNDATION |
发明人 |
HWANG, CHEOL SEONG;PARK, MIN HYUK;KIM, YU JIN |
分类号 |
H01L27/108;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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