发明名称 |
Method for fabricating storage electrode of dynamic random access memory cell |
摘要 |
A method for fabricating a storage electrode of a DRAM cell capable of preventing impurities from excessively moving from the storage electrode to diffusion regions. The storage electrode is formed by a double formation of polysilicon layers. An undoped polysilicon layer 11 is primarily deposited over the entire exposed surface of the resulting structure to a thickness corresponding to 40 to 50% of a predetermined thickness of the storage electrode. A doped polysilicon layer is secondarily deposited over the undoped polysilicon layer to a thickness corresponding to 60 to 50% of the predetermined thickness of the storage electrode. The doped polysilicon layer and the undoped polysilicon layer are subjected to a patterning so that predetermined portions thereof are removed so as to form the storage electrode.
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申请公布号 |
US5476805(A) |
申请公布日期 |
1995.12.19 |
申请号 |
US19930151182 |
申请日期 |
1993.11.12 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES, INC. |
发明人 |
WOO, SANG H.;JEON, HA E. |
分类号 |
H01L21/28;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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