发明名称 |
Method for packaging semiconductor dies having through-silicon vias |
摘要 |
Integrated circuit structures and methods are provided. According to an embodiment, a circuit structure includes a die and an anisotropic conducting film (ACF). The die comprises a through via, and the through via protrudes from a surface of the die. A cross-sectional area of the through via in the surface of the die is equal to a cross-sectional area of a protruding portion of the through via in a plane parallel to the surface of the die. The ACF adjoins the surface of the die, and the protruding portion of the through via penetrates the ACF. |
申请公布号 |
US8629563(B2) |
申请公布日期 |
2014.01.14 |
申请号 |
US201213368999 |
申请日期 |
2012.02.08 |
申请人 |
SU CHAO-YUAN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
SU CHAO-YUAN |
分类号 |
H01L23/52;H01L23/48;H01L29/40 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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