发明名称 |
Mask free protection of work function material portions in wide replacement gate electrodes |
摘要 |
In a replacement gate scheme, after formation of a gate dielectric layer, a work function material layer completely fills a narrow gate trench, while not filling a wide gate trench. A dielectric material layer is deposited and planarized over the work function material layer, and is subsequently recessed to form a dielectric material portion overlying a horizontal portion of the work function material layer within the wide gate trench. The work function material layer is recessed employing the dielectric material portion as a part of an etch mask to form work function material portions. A conductive material is deposited and planarized to form gate conductor portions, and a dielectric material is deposited and planarized to form gate cap dielectrics. |
申请公布号 |
US8629511(B2) |
申请公布日期 |
2014.01.14 |
申请号 |
US201213471852 |
申请日期 |
2012.05.15 |
申请人 |
KOBURGER, III CHARLES W.;BERGENDAHL MARC A.;HORAK DAVID V.;PONOTH SHOM;YANG CHIH-CHAO;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KOBURGER, III CHARLES W.;BERGENDAHL MARC A.;HORAK DAVID V.;PONOTH SHOM;YANG CHIH-CHAO |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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