发明名称 |
Air gap-containing interconnect structure having photo-patternable low k material |
摘要 |
Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures. |
申请公布号 |
US8629561(B2) |
申请公布日期 |
2014.01.14 |
申请号 |
US201213540931 |
申请日期 |
2012.07.03 |
申请人 |
CLEVENGER LAWRENCE A.;DARNON MAXIME;LIN QINGHUANG;LISI ANTHONY D.;NITTA SATYANARAYANA V.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CLEVENGER LAWRENCE A.;DARNON MAXIME;LIN QINGHUANG;LISI ANTHONY D.;NITTA SATYANARAYANA V. |
分类号 |
H01L23/48;H01L21/70;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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