| 摘要 |
A row decoder is disposed on a side of a memory cell array in a column direction and supplies one of word lines with a first drive signal for selecting one of memory cells. A dummy word line is formed extending in the column direction. A dummy bit line is formed extending in a row direction. At least one of the dummy word line and the dummy bit line is disposed outside of the memory cell array. The row decoder outputs a second drive signal toward a sense amplifier circuit via the dummy bit line and the dummy word line. |
