| 摘要 |
In order to further develop a method of and a system (100) for controlling the programming of, in particular the erase/write access to, a memory device (10) comprising multiple memory cells (20, 22), said memory cells (20, 22) being exposed to wear resulting from repeated programming, in such way that an increased lifetime of the memory device (10), in particular on an integrated circuit, is provided even under exceptional stress of the memory device (10), it is proposed to provide-at least one quality measuring/determining means (40, 42) being assigned to each memory cell (20, 22) in order to measure and/or to determine the quality of the respective memory cell (20, 22), in particular in order to measure and/or to determine the prospective endurance specified according to a number of change cycles which the respective memory cell (20, 22) can endure within a performance tolerance, and-at least one control means (50), in particular by at least one access load distributor, -being coupled to each quality measuring/determining means (40, 42), and-deciding depending on the measured and/or determined quality of the memory cells (20, 22), which one is selected for programming. |
