| 摘要 |
PURPOSE: A method for manufacturing a graphene substrate and the graphene substrate manufactured by the same are provided to etch a metal catalytic layer after a metal catalytic layer/graphene layer is bonded to a substrate to be transferred. CONSTITUTION: A method for manufacturing a graphene substrate includes the following: a first silicon substrate and a second silicon substrate are prepared(S110); a first dielectric layer, a metal catalytic layer, and a graphene layer are formed on the first silicon substrate(S120); a second dielectric layer is formed on the graphene layer(S130); the first silicon substrate is bonded with the second silicon substrate such that the second dielectric layer faces the second silicon substrate(S140); the first silicon substrate, the first dielectric layer, and the metal catalytic layer are eliminated(S150); and a third dielectric layer is formed on the second silicon substrate. [Reference numerals] (S110) Preparing a first silicon substrate and a second silicon substrate; (S120) Forming a first dielectric layer, a metal catalytic layer, and a graphene layer on the first silicon substrate; (S130) Forming a second dielectric layer on the graphene layer; (S140) Bonding the first silicon substrate and the second silicon substrate; (S150) Removing the first silicon substrate, the first dielectric layer, and the metal catalytic layer |
