发明名称 Gas Supplying Unit and Batch Type Apparatus for Forming Epitaxial Layer Having the Same
摘要 The present invention relates to a gas supplying unit. According to one embodiment of the present invention, the a gas supplying unit including a reactor for generating a metal halogen gas and providing a space for the reaction between a metal source and a halogen-containing gas; and a flow change part for changing the flow of the halogen-containing gas supplied from one of the halogen-containing gas end towards the position of the metal source. The end of the halogen-containing gas is located in the outside of the metal source in the reactor.
申请公布号 KR101350779(B1) 申请公布日期 2014.01.13
申请号 KR20120118120 申请日期 2012.10.23
申请人 发明人
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
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