| 摘要 |
PURPOSE: A plasma processing apparatus is provided to accurately measure the temperature of a wafer support by blocking noise caused by induced current on the wafer support. CONSTITUTION: A plasma processing apparatus comprises a chamber(110) in which plasma is created, a wafer support which is arranged inside the chamber to support a wafer(10) on one side thereof and has a temperature sensor insertion groove on the other side thereof, a temperature sensor(150) which is inserted in the temperature sensor insertion groove to measure the temperature of the wafer support, and a first induced current blocking cap which surrounds the temperature sensor to expose the tip of the temperature sensor and inserted inside the temperature sensor insertion groove to cut off induced current created on the wafer support. |
