NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE USING SUPERLATTICE STRUCTURE

摘要

The present invention relating to a nitride based semiconductor light emitting device having a superlattice structure enhances an optical power by enhancing resistance characteristics. In the nitride based semiconductor light emitting device including a p type electrode and an n type electrode, the p type electrode and the n type electrode are formed on a supperlattice layer including a plurality of nitride layers whose composition changes cyclically, the superlattice layer has an electrode forming part where at least two continuous nitride layers among the nitride layers are exposed, and either the p type electrode or the n type electrode is formed on the electrode forming part.