| 摘要 |
<p>Methods and systems to remove a native silicon oxide layer on a wafer are provided. In a non-sequential approach method, a wafer having a native silicon oxide layer on a poly-silicon layer is provided. An etchant including hydrogen systems and fluorine systems is introduced and is exposed to plasma and is carried on the wafer at the relatively low temperature. After that, the wafer is heated at the slightly elevated temperature and actually removes the native silicon oxide layer. In a sequential approach method, a wafer having a native silicon oxide layer is provided. A first etchant including hydrogen systems and fluorine systems is carried on the wafer. After that, the wafer is heated at the slightly elevated temperature. A second etchant is carried toward the wafer and is exposed to plasma and completes the removal of the native silicon oxide layer, and then the removal of the other layer such as the poly-silicon layer is disclosed.</p> |
