| 摘要 |
The invention relates to an integrated circuit (2) including a stack consisting of a semiconductor substrate (201) having a first type of doping (P), an embedded UTBOX insulating layer (203), and a semiconductor layer, wherein said integrated circuit includes: first and second electronic components; first and second floor plans placed under the embedded insulating layer vertically perpendicular, respectively, to the first and second electronic components; and first and second casings, having the first doping type, placed under the first and second floor plans, respectively. The first and second casings are separated from the semiconductor substrate by means of a deep casing having a second type of doping. The first and second casings are separated from each other by means of a side casing. The integrated circuit includes a polarization circuit making it possible to apply separate voltages to the first and second casings. |
