| 摘要 |
<p>The invention relates to an integrated circuit comprising, on top of a substrate, a portion (RITX) comprising a plurality of metallization levels separated by an insulating region. The integrated circuit further comprises, inside said part, a mechanical electric-switching device (CMT) comprising, in a recess (LG), at least a first thermally deformable assembly (ENS1) including a beam (PTR) supported at at least two different locations by at least two arms (BR1A, BR1B) rigidly connected to the edges (BDA, BDB) of the recess, the beam and the arms being made of metal and located within a single first metallization level, and an electrically conductive body (CPS), wherein the first assembly (ENS1) has at least a first configuration at a first temperature and a second configuration when at least one of the arms is at a second temperature that is different from the first temperature, and wherein the beam (PTR) is spaced apart from the body (CPS) in one of the configurations and is in contact with the body and immobilized by said body (CPS) in the other configuration, so as to establish or prevent an electric connection via said body and said beam, wherein said first assembly can be actuated so as to move from one configuration to the other.</p> |
