| 摘要 |
<p>The present invention discloses a manufacturing method of a high resistivity ZnO thin film on a substrate using a molecular beam epitaxy technique. In a manufacturing method of the present invention, a thin film with superior density and step coverage than an existing i-ZnO layer manufactured using an existing sputtering method can be obtained by injecting a larger amount of O2 precursor compound in a step of addition of the O2 precursor compound, and the manufacturing a large area thin film is easy and the manufacturing costs can be reduced. The present invention is applied to a thin film solar cell, particularly, a manufacture of a CIGS thin film solar cell, and can be applied to a device which uses a transparent conductive material such as touch screen, display and et cetera.</p> |
