METHOD FOR SYNTHESIS OF HIGH-TEMPERATURE FERROELECTRIC-SEMICONDUCTORS BASED ON SOLID SOLUTIONS OF BARIUM AND POTASSIUM-BISMUTH TITANATES

摘要

A method for synthesis of a high-temperature ferroelectric-semiconductor based on barium and potassium-bismuth titanates is proposed. For the purpose of lowering sintering temperature, reducing bismuth and potassium losses, reduction of electric resistance at room temperature, and increasing Curie points the preliminary prepared using oxalate method barium titanate is used as barium-containing compound.