| 摘要 |
FIELD: electricity.SUBSTANCE: hybrid photosensitive circuit comprises: a diamond matrix photodetector (MPD), indium bars and silicon multiplexer sensitive sites. The structure of the MPD includes: an upper planar electrode, to which a bias voltage is applied, a diamond plate and lower electrodes of sensitive elements of the diamond MPD, from which the signal is picked. The lower electrodes are electrically connected through columns with indium arranged in a rectangular matrix with axes X and Y by sensitive elements of the silicon multiplexer. Number of indium columns on each X and Y axes must be at least two. In addition, the photodetector array of diamond in the X and Y has twice the pitch compared to the matrix of the silicon multiplexer, and lower electrodes of the diamond sensitive elements in the MPD are arranged in a staggered manner. The lower electrodes of the diamond sensitive elements of the MPD are connected electrically by indium bars only with odd or even sensitive sites of the silicon multiplexer, however, free sensitive sites of the silicon multiplexer may be used for recording visible and infrared radiations.EFFECT: expansion of the range of detected radiation, due to simultaneous recording of images in ultraviolet, visible and infrared spectra, longer life of HPC by eliminating ingress of hard UV radiation into a multiplexer.4 dwg |
