METHOD AND DEVICE FOR ION IMPLANTATION

摘要

PURPOSE: To provide an ion implanting device with which can be implanted ion beam into a wafer at the optimum implantation angle and establish an ion implanting method for SiMOX capable of implantation of oxygen ion to a proper depth. CONSTITUTION: An ion beam X taken out of an ion source 100 is driven into a wafer 330. The wafer 300 is held by a rotary disc 310, which is rotated and is swung by a motor 370 in a plane approx. orthogonal to the ion beam. Further the disc 310 is rotated by a motor 352 round a tilting shaft 352 to change the incident angleθof the ion beam X to the wafer relative to the wafer 330.