| 发明名称 |
SEMICONDUCTOR FORMATION BY LATERAL DIFFUSION LIQUID PHASE EPITAXY |
| 摘要 |
<p>A method for growing semiconductor wafers by lateral diffusion liquid phase epitaxy is described. Also provided are a refractory device for practicing the disclosed method and semiconductor wafers prepared by the disclosed method and device. The disclosed method and device allow for significant cost and material waste savings over current semiconductor production technologies.</p> |
| 申请公布号 |
KR20140004232(A) |
申请公布日期 |
2014.01.10 |
| 申请号 |
KR20137031162 |
申请日期 |
2012.05.17 |
| 申请人 |
MCMASTER UNIVERSITY |
发明人 |
KITAI ADRIAN;YU HAOLING;LI BO |
| 分类号 |
C30B19/02;C30B29/06;H01L21/02;H01L21/67 |
主分类号 |
C30B19/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
