ON-SITE GENERATION OF ULTRA-HIGH-PURITY BUFFERED HF FOR SEMICONDUCTOR PROCESSING

摘要

The present application describes systems and methods for preparing ultra-high-purity hydrogen peroxide on-site at an integrated circuit fabrication front-end facility. The starting point is high-purity aqueous H2O2 (e.g. 30 % H2O2). The incoming aqueous H2O2 is further purified in on-site purification units before it is made available for combination with other reagents.