| 发明名称 |
POLISHING SOLUTION, PRESERVATION SOLUTION AND POLISHING METHOD FOR CMP |
| 摘要 |
<p>The present invention relates to a polishing solution for CMP, which comprises silica particles, a quaternary phosphonium salt having at least one aromatic ring bound to a phosphorous atom and water, wherein each of the silica particles has a silanol group density of 1.0 to 2.0 /nm2 and an aspect ratio of 1.3 or more, the zeta potential in the polishing solution for CMP is +10 mV or more, and the ratio of the content of the silica particles to the content of the quaternary phosphonium salt is 750 or more.</p> |
| 申请公布号 |
WO2014007063(A1) |
申请公布日期 |
2014.01.09 |
| 申请号 |
WO2013JP66862 |
申请日期 |
2013.06.19 |
| 申请人 |
HITACHI CHEMICAL COMPANY, LTD. |
发明人 |
SHIMADA TOMOKAZU;MISHIMA KOUJI;TANAKA TAKAAKI |
| 分类号 |
H01L21/304;B24B37/00;C09K3/14 |
主分类号 |
H01L21/304 |
| 代理机构 |
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